2SC5890 Datasheet, PDF (2/2 Pages) Renesas Technology Corp – Silicon NPN Epitaxial UHF / VHF wide band amplifier

Silicon NPN RF Transistor
2SC5890
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
lc=10uA;lE=0
20
V
ICBO
Collector Cutoff Current
VCB=12V;IE=0
1
PA
ICEO
Collector Cutoff Current
VCE= 9V; RBE= °°
1
mA
IEBO
Emitter Cutoff Current
VEB= 1 .5V; lc= 0
10
uA
hFE
DC Current Gain
lc= 20mA ; VCE= 5V
100
200
fr
Current-Gain—Bandwidth Product
lc= 30mA ; VCE= 5V ;f= 1 GHz
5.5 7.8
GHz
COB
Output Capacitance
|E=0 ; VCB=5V;f= 1.0MHz
0.9
1.5
pF
Cre
Reverse Transfer Capacitance
IE= 0 ; VCB= 5V;f= 1.0MHz
0.85
pF
1 S21e I 2 ^{Insertion Power Gain}
lc= 30mA ; VCE= 5V;f= 1GHz
11
dB
PG
Power Gain
lc= 30mA ; Vcc= 5V;f= 900MHz
9.5 12
dB
NF
Noise Figure
lc= 5mA ; VCc= 5V;f= 900MHz
1.0 1.9 dB
c^- 3UU
J>
§_
o
a soo
o
Collector Power Dissipation Curve
when using alumina ceramic board:
^S = 25 mm X 60 mm. t = 0.7 mm
\
Q.
'$ 400
b
O~ii
^^
a 200
__tso
_
O
\0
50
100
150
200
Ambient Temperature Ta (<:'C)
DC Current Transfer Ratio vs.
Collector Current
3V
100
O
o
Q
2
5 10 20 50 100
Collector Current lc (mA)