2SC5890 Datasheet, PDF (1/2 Pages) Renesas Technology Corp – Silicon NPN Epitaxial UHF / VHF wide band amplifier

JEIIZU
C/
20 STERN AVE.
SPRINGFIELD, .NEW JERSEY 07081
U.S.A.
, Line.
Silicon NPN RFTransistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2SC5890
UkSUKIKMUN
• High Gain Bandwidth Product
fT = 7.8 GHz TYP.
• High power gain and low noise figure ;
PG = 12 dB TYP., NF = 1 .0 dB typ. @ f = 900 MHz
APPLICATIONS
• Designed for use in UHF - VHP wide band amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO ^{Collector-Emitter Voltage}
12
V
VEBO
Emitter-Base Voltage
1.5
V
Ic
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
75
rnA
0.7
W
150
r
-55-150
r
>"4|^^
SOT-23-3L package
HiH
III
T , ^,.
Marking
L_{J |L* D-L.}
*i ^{Q 1^}
a c _:Eminer
1 *:{. Oile :ror
LE =p IF \— 1 H i
K _{^-J 1 c=U}
l-o-E_{=" -*-|**|L}
T 4M
li-
mm
DIM
MIN
MAX
A
0. 30
0. 40
B
1,50
1.70
C
2. 65
2.95
D
0.95
G
1,80
2.00
H
2. 32
3. 02
K
1,05
1,25
L
0.70
M
0.10
0.20
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