2SC5772 Datasheet, PDF (2/2 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial UHF / VHF wide band amplifier

Silicon NPN RF Transistor
2SC5772
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
lc=10uA;lE=0
15
V
ICBO
Collector Cutoff Current
VCB=12V;IE=0
1
nA
ICEO
Collector Cutoff Current
VCE= 9V; RBE= «
1 mA
IEBO
Emitter Cutoff Current
VEB=15V;IC=0
10
uA
hFE
DC Current Gain
lc= 20mA ; VCE= 5V
80
160
fr
Current-Gain—Bandwidth Product
lc= 20mA ; VCE= 5V ;f= 1 GHz
6
9
GHz
COB
Output Capacitance
IE= 0 ; VCB= 5V;f= 1.0MHz
0.9
1.5
PF
Cre
Reverse Transfer Capacitance
lE=0;VCB=5V;f= 1.0MHz
0.7
PF
S21e I 2 ^{Insertion Power Gain}
lc= 20mA ; VCE= 5V; f= 1GHz
11.8
dB
PG
Power Gain
lc= 20mA ; Vcc= 5V;f= 900MHz
9.5
13
dB
NF
Noise Figure
lc= 5mA ; VCG= 5V;f= 900MHz
1.1
1.9
dB
Collector Power Dissipation Curve
IVJUVJ
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50
100
150
200
Ambient Temperature Ta (:C)
DC Current Transfet Ratio vs.
200
Collector Current
Vrp = 5 V -
100
3V
O
Q
2
5 10 20 50 100
Collector Current lc (mA)