2SC5772 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial UHF / VHF wide band amplifier

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN RF Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2SC5772
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• High Gain Bandwidth Product
fT = 9 GHz TYP.
• High power gain and low noise figure ;
PG = 13dBTYP, NF = 1.1 dB typ. @ f = 900 MHz
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S OT- 2 3- 3 L package
APPLICATIONS
• Designed for use in UHF ~ VHF wide band amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
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SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Ic
Collector Current-Continuous
VALUE UNIT
15
V
9
V
1.5
V
75
mA
K-
i_rr.
r-,/ ,KJF
VI
H₄
ML
mm
DIM
WIN
MAX
A
0,30
0.40
6
1.50
1.70
C
2. 65
2.95
D
0. 95
Collector Power Dissipation
PC
@Tc=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
0.7
W
150
r
-55-150
'C
G
1.80
2.00
H
2. 82
3, 02
K
1.05
1.. 25
L
0.70
U
0.10
0.20
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