2SC2542_13 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistors

CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage ^{lc=10mA; IB=0}
V(BR)CBO Collector-base breakdown voltage
lc=1mA;lE=0
V(BR)EBO Emitter-base breakdown voltage
lE=0.1mA;lc=0
VcE(sat) ^{Collector-emitter saturation voltage lc=2A; IB=0.4A}
VsE(sat) ^{Base-emitter saturation voltage}
lc=2A; IB=0.4A
ICBO
Collector cut-off current
Vcs=450V ;IE=0
IEBO
Emitter cut-off current
VEe=7V; lc=0
MFE
DC current gain
lc=2 A ; VCE=5V
Switching times
*on
Turn-on time
ts
Storage time
tf
Fail time
lc=4A; IB1=0.8A
lB2=-0.8A;RL=20n
MIN TYP. MAX UNIT
400
V
450
V
7
V
1.2
V
1.5
V
1.0
mA
0.1
mA
10
1.0 us
2.0
MS
1.0
MS
2830^
&
leroo-
0.44+0.01