2SC2542_13 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Power Transistors

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
USA
Silicon NPNPower Transistors
TELEPHONE: [phone]
[phone]
2SC2542
DESCRIPTION
With TO-220C package
•High voltage ,high speed switching
•High reliability
APPLICATIONS
•Switching regulators
•Ultrasonic generators
•High frequency inverters
General purpose power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
• <—<» .
W
123
Fig.1 simplified outline (TO-220C) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
Ic
Collector current
IB
Base current
PC
Collector power dissipation
Tc=25
Tj
Junction temperature
Tstg
Storage temperature
VALUE
450
400
7
5
1.5
40
150
-45-150
UNIT
V
V
V
A
A
W
-
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rthj-C ^{Thermal resistance junction case}
MAX
3.0
UNIT
/W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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