2SC2331 Datasheet, PDF (2/2 Pages) NEC – Silicon Power Transistor

CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage ^{lc=1.0A,lB=0.1A,L=1mH}
VcEsat Collector-emitter saturation voltage lc=1A; IB=0.1A
VsEsat Base-emitter saturationvoltage
IC=1A;IB=0.1A
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
hpE-1
Emitter cut-off current
DC current gain
VEB=5V; lc=0
lc=0.1A;VCE=5V
hpE-2
DC current gain
lc=1 A ; VCE=5V
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1.0AIB1=-IB2=0.1A
RL=50n;Vcc!B50V
MIN TYP. MAX UNIT
100
V
0.6
V
1.5
V
10
MA
10
UA
40
40
200
0.5
MS
1'a
MS
0.5
MS
2.80
0.00
3.75
830
13.00
15SO
Z6L3O
5
10.00
8.76
.300+0.01
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