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2SC2331 Datasheet, PDF (1/2 Pages) NEC – Silicon Power Transistor
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistors
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
Ic
Collector current
I CM
Collector current-Peak
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25:
Tc=25
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
2SC2331
VALUE
100
100
7
2.0
4.0
1.0
1.5
15
150
-55-150
UNIT
V
V
V
A
A
A
W
B CE
Fig.1 simplified outline (TO-220) and symbol
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information ftirnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NI
Semi-Conductors encouragescustomers to verify that datasheets are current before phicing orders.