2SA1930 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc~25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) ^{Collector-Emitter Sustaining Voltage lc=-10mA;lB=0}
VoE(sat) ^{Collector-Emitter Saturation Voltage IC=-1.0A;IB=-0.1A}
VBE(OH) Base-Emitter Voltage
lc=-1A;VCE=-5V
ICBO
Collector Cutoff Current
At rated Voltage
IEBO
Emitter Cutoff Current
At rated Voltage
hpE-1
DC Current Gain
lc=-0.1A; VcE=-5V
hpE-2
DC Current Gain
lc=-1A;VCE=-5V
Cob Collector Output Capacitance
lE=0;VCB=-10V,f=1MHz
fr
Current-Gain—Bandwidth Product lc=-0.3A; VCE=-5V
2SA1930
MIN TYP. MAX UNIT
-180
V
-1.0
V
-1.5
V
-5
uA
-5
wA
100
320
40
16
PF
200
MHz