2SA1930 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

J.E.IIS.U
C7
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line.
Silicon PNP Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
2SA1930
DESCRIPTION
• High Transition Frenquency : fr=200MHz(Typ.)
• Complementary to 2SC5171
APPLICATIONS
• Power amplifier applications
• Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-2
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
-1
A
20
W
150
°C
Tstg
Storage Temperature Range
-55-150
'C
1 ^{PIN 1.BASE}
2.COLLECTOR
3. EMITTER
1 23
TO-220F package
- B-
- C-
m^Q
-s-
i F,
fc '-*
UI
A
V
\f ; i
i ,_L -
"-V;,U
H
\
- R-
.-D
- N-
J --
mm
DIM WIN
A 14.95
B 10.00
C 4.40
D 0.75
F 3.10
H 3.70
J 0.50
K 13.4
L 1.10
N 5.00
q 2.70
R 2.20
s 2.65
u 6.40
MAX
15.05
10.10
4.60
0.80
3.30
3.90
0.70
13.6
1.30
5.20
2.90
2.40
2.85
6.60
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