2N637 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – POWER CONVERTER TRANSISTORS

Collector-to-Emitter Breakdown Voltage
Ic = 200 mAdc; Rbe = 30 ohms
BVce
2N637
fc 2N637A
2N637B
Collector-to-Base Cutoff Current
Vcb = -25 Vdc; le = 0
Vcb = -60 Vdc; le = 0
Vcb =: -60 Vdc; ic - 0
Icbo
2N637
2N637A
2N637B
Collector-to-Base Cutoff Current +85 C
Vcb = -25 Vdc; le = 0
Vcb = -60 Vdc; le = 0
Vcb = -60 Vdc; le = 0
Icbo
2N637
2N637A
2N637B
Min. Typical Max. Units
35
Vds
65
Vdc
75
Vdc
0.5
1
mAdc
2
5
mAdc
2
5
mAdc
5
10
mAdc
8
15
mAdc
8
15
mAdc
Life Test: Maximum DC current gain change of 30'/( after 1000 hours at 100°C.
COLLECTOR
CONNECTION
TRANSISTOR AND MOUNTING KIT OUTLINE
ITWfl WAFER-v
EMITTER 1.040
DIA. TERMINAL)
SWITCHING CIRCUIT
13 JX
n r ^+IOV
_
-IOV I_ I
33 .n.
DIMtNSIONS ARE IN INCHES