2N637 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – POWER CONVERTER TRANSISTORS

20 STERNAVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ucti, Line.
, A ^A ,
POWER CONVERTER
TRANSISTORS
2N637, 2N637A, and 2N637B are a series of high
gain transistors especially designed as high current switching
devices for DC-DC converter and DC-AC inverter circuits. The
series have three different voltage breakdown ratings for use
in both 12 and 28 volt supplies without danger of burnout. The
current gain is held to a close tolerance to eliminate the need
for matching. The transistors are capable of switching up to
250 watts. There are also numerous applications for relay re-
placements, drivers for relays, magnetic clutches, solenoids and
other loads requiring high current.
TELEPHONE: [phone]
[phone]
FAX: [phone]
Absolute Maximum Ratings:
Vce
Ic
PC*
Vdc
Adc
W
40 (2N637)
25
70 (2N637A)
80 (2N637B)
T storage
Tj
°C
°C
500
-60 to +100
100
*Pc is the maximum average power dissipation. It can be exceeded during the switching time.
Electrical Characteristics: Mounting base temperature 25°C unless otherwise specified.
Current Gain
hFE
Vce = -5 Vdc; Ic = 3 Adc
gFE
Min.
Typical Max. Units
30
60
1.5
2.0
mhos
Collector Saturation Voltage
Vce
Ic = 3.0 Adc; Ib = 300 mAdc
0.8
1.5
Vdc
Switching Characteristics Rise Time tr
Ic = 3.0 Adc;
Fall Time tf
Ib = 300 mAdc
15
usec
35
usec
Thermal Resistance
1.5
2.0 °C/W
Emitter-to-Baae Cutoff Current
lebo
Veb = -15 Vdc; Ic = 0
0.5
2.0 mAdc
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissionsdiscovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors