2N5529 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – NPN SILICON POWER TRANSISTORS

2N5529 2N5530 2N5533 2N5534
ELECTRICAL CHARACTERISTICS ( TC = 25°C UNLESS OTHERWISE NOTED)
CHARACTERISTICS
COLLECTOR EMITTER SUSTAINING VOLTAGE™
(!c=50mA)
(IC= 50 mA, NOTE 2)
2N5529. 2N5530
2NS533, 2N5534
2N5529, 2145530
2N5533.2N5534
COLLECTOR-CUTOFF CURRENT
(VCE - 3ov, vBE - o, TC- iooec)
COLLECTOR-CUTOFF CURRENT
(VCB- RATED)
(VCB= RATED, NOTE 2)
COLLECTOR-CUTOFF CURRENT
(VCB= 30V)
(VCB - 30V, NOTE 2)
COLLECTOR-CUTOFF CURRENT
(VCE= RATED)
EMITTER CUTOFF CURRENT
(VEB = 3.0V)
(VEB - 3.0V, NOTE 2)
EMITTER FLOATING POTENTIAL
(VCB - RATED. IE = o>
DC CURRENT GAIN'1'
(VcE 5.0V, IG = 0.5A)
(VCE s.ov, IG •= O.SAJ
(VCE S.OV, IQ = 3.0A)
(VCE S.OV, 1C - 3-OA)
(VcE S.OV, Ic = 5.0A)
(VCE S.OV, IG = 5.0A)
(VCE 2.0V, Ic - 10A)
(VCE 5 °V. 'C - 3.0A NOTE 2)
(VcE 5.0V, IC- 3.0ANOTE2)
2N5529, 2N5530
2N5533, 2NS534
2N5529, 2NS530
2N5533, 2N5534
2N5529, 2N5530
2N5533, 2N5534
2N5529, 2N5530
2N5533, 2N5534
COLLECTOR-EMITTER SATURATION VOLTAGE<1>
(IC = 3.0A, IB - 0.3A)
(IC - 0.5A. IB = 4.0A)
(lc _ IDA, IB - 4.0A)
(IC = 3.0A, IB = 0.3A,NOTE 2)
(IC = 3.0A, IB = 0.5A, NOTE 2)
2N5529, 2N5530
2N5533, 2N5534
2N5529, 2NSS30
2N5533, 2N5534
BASE-EMITTER SATURATION VOLTAGE!"
(IC - 3.0A, IB = 0.3A)
(IC - 3.0A, IB = 0.5A)
2N5529, 2N5530
2N5533, 2N5534
BASE-EMITTER VOLTAGE
(VCE = S.OV, IC = 3.0A)
(VcE - S.OV, Ic =• 5.0A)
MAGNITUDE OF SMALL SIGNAL GAIN
(VcE = 28V, Ic - 0.5A, 1 = 25 MHz)
SMALL SIGNAL GAIN
(VCE " S.OV, Ic = 3.0A, f - 1 .0 KHz) 2N5529, 2N5530
2N5533, 2N5S34
OUTPUT CAPACITANCE
(VCB = 30V, f = 1 .0 MHz)
SYMBOL
VCEO(SUS)
'CEX
'CBO
!CBO
'CEO
'EBO
VEBF
"FE
vce(sal)
vBE(sat)
VBE
Ihtal
hle
cobo
MIN.
40
75
40
75
40
25
40
30
25
20
2.5
15
7.0
8.0
20
15
MAX.
1.0
1.0
1.0
0.1
1.0
50
1.0
1.0
1.0
300
300
200
150
1.25
1.25
2.0
2.0
3.0
1.5
1.5
1.5
3.0
75
UNITS
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
PF