2N5529 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – NPN SILICON POWER TRANSISTORS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Unc.
TELEPHONE: [phone]
ZN5529 2N5530 2N5533 2N5534
[phone]
FAX: [phone]
NPN SILICON POWER TRANSISTORS
RADIATION RESISTANT
FEATURES
HIGH POWER
RADIATION EXPOSURE LEVEL TO 5x10™ nvt
TOTAL NEUTRON FLUX GREATER THAN 10 KEV
10 AMPERES
APPLICATIONS
POWER AMPLIFIER
RADIATION ENVIRONMENTS
ULTRA HIGH FREQUENCY
VCBO
VCEO
VEBO
'c
IB
PD
T0-*61
'All leads Isolated from case
ARSOLUTE MAXIMUM RATINGS
COLLECTOR-BASE VOLTAGE
COLLECTOR-EMITTER VOLTAGE
EMITTER-BASE VOLTAGE
2N5529
2N5530*
60V
40V
3V
2N5533
2N5534*
90V
75V
3V
CONTINUOUS COLLECTOR CURRENT
CONTINUOUS BASE CURRENT
10 A
10 A
4A
4A
OPERATING JUNCTION TEMPERATURE
STORAGE TEMPERATURE
THERMAL RESISTANCE, JUNCTION TO CASE
POWER DISSIPATION (25°C)
-65°C I
-65eCto +200°C.
5°C/W •
35 W
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
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