2N5194 Datasheet, PDF (2/2 Pages) ON Semiconductor – Silicon PNP Power Transistors(4 AMPERE)

ELECTRICAL CHARACTERISTICS (Tc = 25CC unless otherwise noted) (Note 2)
Characteristic
j
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 3)
(lc = 0.1 Adc, IB = 0)
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Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
(VCE = 80 Vdc, IB = 0)
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Collector Cutoff Current
(VCE = 6° Vdc, VBE(0ff) = 1 .5 Vdc)
(VCE = 80 Vdc, V6E(off) = 1 .5 Vdc)
(VCE = 60 Vdc, VBE(0tf) = 1.5 Vdc, Tc = 125°C)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, Tc = 125°C)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Emitter Cutoff Current
(VBE = 5.0 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(lc = 1.5 Adc, VCE = 2.0 Vdc)
(lc = 4.0 Adc, VCE = 2.0 Vdc)
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Collector-Emitter Saturation Voltage (Note 3)
(lc = 1.5 Adc, IB = 0.15 Adc)
(lc = 4.0Adc, IB = 1.0Adc)
Base-Emitter On Voltage (Note 3)
(lc= 1.5 Adc, VCE = 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(lc = 1 .0 Adc, VCE = 10 Vdc, f = 1 .0 MHz)
2. Indicates JEDEC registered data.
3. Pulse Test: Pulse Width < 300 (is, Duty Cycle < 2.0%.
TO-225
Symbol
VcEO(sus)
!CEO
ICEX
ICBO
!EBO
hfE
VcE(sat)
VeE(on)
fT
j Min
60
80
-
-
„
_
-
-
-
-
-
25
20
10
7.0
-
-
-
2.0
Max J_ Unit_|
Vdc
—
-
mAdc
1.0
1.0
mAdc
0.1
0.1
2.0
2.0
mAdc
0.1
0.1
1.0
mAdc
-
100
80
-
Vdc
0.6
1.4
1.2
Vdc
-
MHz
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M.1982,
2, CONTROLLING DIMENSION: INCH.
3 077-01 THRU -08 OBSOLETE, NEW STANDARD
077-09.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A 0.425 0.435 10.80 11.04
B 0,295 0.305 7.50
7,74
C 0,095 0.105
2,42
2.66
D 0,020 0,026 _—SJJLj 0.66
f 0.115 0.130
2.93
3.30
G
0.094 BSC
2.39 BSC
H 0.050 0,095 1.27
2,41
J 0.015 0.025 0.39
0.63
K 0.575 0.655 14.61 16.63
M
5C' rvp
5" ryp
Q 0.148 0.158
3.76
4.01
F) 0.045 0.065 1,15
1,65
S 0,025 0.035 0,64
0.88
U 0145
0.155
3,69
3,93
V 0,040
—
1,02
—
STYLE 1:
PIN1.
2
3
EMITTER
COLLECTOR
BASE