2N5194 Datasheet, PDF (1/2 Pages) ON Semiconductor – Silicon PNP Power Transistors(4 AMPERE)

^s.mi'Cond\j.ctoi tPioducti, (inc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2N5194, 2N5195
Preferred Devices
Silicon PNP Power
Transistors
These devices are designed for use in power amplifier and switching
circuits: excellent safe area limits. Complement to NPN 2N519L
2N5192.
MAXIMUM RATINGS (Note 1)
Rating
Symbol 2N5194 2N5195 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @ Tc = 25 C
Derate above 25 C
VCEO
VCB
VEB
'c
IB
PD
60
80
60
80
5.0
4.0
10
40
320
Vdc
Vdc
Vdc
Adc
Adc
W
W/ C
Operating and Storage Junction
Temperature Range
Tj, Tstg
-65 to + 150
C/W
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction-to-Case
BJC
3.12
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data.
TELEPHONE: [phone]
[phone]
FAX: [phone]
4 AMPERE
POWER TRANSISTORS
PNP SILICON
60 - 80 VOLTS
TO-225AA
MARKING DIAGRAM
Y
VWV
2N519x
= Year
= Work Week
= Device Code
x = 4 or 5
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