2N5038 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(20A,140W)

2N5038
THERMAL DATA
Rthj-case [Thermal Resistance Junction-case
Max
1.25
°C/W
ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICEV Collector Cut-off
VCE = 140 V
Current (VBe = -1.5V) V C E = 1 0 0 V T C = 1 5 0 ° C
50
mA
10
mA
ICEO Collector Cut-off
Current (IB = 0)
VCE = 70 V
20
mA
IEBO Emitter Cut-off Current VEB = 7 V
(lc = 0)
VEB = 5 V
50
mA
5
mA
VcEO(sus)* Collector-Emitter
Sustaining Voltage
Ic = 0.2 A
90
V
VcER(sus)* Collector-Emitter
Ic = 0.2 A RBE = 50 £i
110
V
Sustaining Voltage
VcEX(sus)* Collector-Emitter
Ic = 0.2 A RBE = 100 ii VBE=-1.5V 150
V
Sustaining Voltage
VcE(sat)* Collector-Emitter
Saturation Voltage
| C = 1 2 A IB = 1.2 A
Ic = 20 A IB = 5 A
1
V
2.5
V
VBE(sat)* Collector-Emitter
Saturation Voltage
Ic = 20 A IB = 5 A
3.3
V
VBE* Base-Emitter Voltage l c = 1 2 A VCE = 5V
1.8
V
FIFE* DC Current Gain
Ic = 2 A VCE = 5 V
l c = 1 2 A VcE= 5V
50
250
20
100
hfe Small Signal Current Ic = 2 A VCE = 10 V f = 5 MHz
12
Gain
CCBO Collector-Base
Capacitance
IE = 0 VCB = 10 V f = 1-MHz
300
PF
tr
Rise Time
ts
Storage Time
tf
Fall Time
l c = 1 2 A VCC = 3 0 V
lB1 = - l B 2 = 1-2A
0.5
US
1.5
US
0.5
(IS
Is/b** Second Breakdown
Collector Current
VCE = 28 V
VCE = 45 V
5
A
0.9
A
Es/b Second Breakdown
VBE = -4 V RBE = 20 £i L = 180(iH
13
mJ
Energy
Pulsed: Pulse duration = 300 ps, duty cycle 1.5 %
' Pulsed: 0.5 s non repetitive pulse.