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2N5038 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(20A,140W)
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Lf nc.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5038
HIGH CURRENT NPN SILICON TRANSISTOR
DESCRIPTION
The 2N5038 is a silicon planar multiepitaxial NPN
transistors in Jedec TO-3 metal case. They are
especially intended for high current and switching
applications.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEX
VCER
VCEO
VEBO
Ic
ICM
IB
Plot
Tgtg
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (VBE=-1 .5V
RBE^IOOQ)
Collector-Emitter Voltage (RBE< 50£2)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (lc = 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at Tc < 25 °C
Storage Temperature
Value
150
150
110
90
7
20
30
5
140
-65 to 200
Unit
V
V
V
V
V
A
A
A
W
°C
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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