2N4898 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(1A, 25W)

ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted )
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
( lc = 100mA, IB = 0)
2N4898
2N4899
2N4900
Collector Cutoff Current
( VCE = 20 V, IB = 0 )
( VCE = 30 V, IB = 0 )
(VCE = 40V, IB = 0)
2N4898
2N4899
2N4900
Collector Cutoff Current
<VCE = RateVCE0.VBE(0(n=1.5V)
( VCE = Rate V^o.V^-1.5 V ,TC = 150«C )
Collector Cutoff Current
(VCB = RateVCBO,lE = 0)
Emitter Cutoff Current
(V^S-OV, lc=0 )
VCEO(IUS)
V
40
60
80
'CEO
mA
0.5
0.5
0.5
ICEX
mA
0.1
1.0
ICBO
mA
0.1
IEBO
mA
1.0
ON CHARACTERISTICS (1)
DC Current Gain
(lc = 50mA,VCB=1.0V)
( lc = 500 mA,VCI = 1.0V)
(IC = 1.0A,VC,= 1.0V)
Collector-Emitter Saturation Voltage
(lc= 1.0 A, IB « 0.1 A)
Base-Emitter Saturation Voltage
(IC = 1.0A,IB = 0.1A)
Base-Emitter On Voltage
(IC = 1.0A,VCE=1.0V)
hFE
40
20
100
10
V«
V
0.6
VBE™
V
1.3
VBE,.*
V
1.3
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product (2)
( lc =250 mA, VCE =10 V, f =1 .0 MHz )
Output Capacitance
( VCB =10 V, IE =0, f = 1 00 KHz )
Small-Signal Current Gain
( lc =250 mA, VCE =10 V, f -1.0 KHz )
(1) Pulse Test: Pulse width - 300 us , Duty Cycle
(2)fT= h,.!'^
2.0%
'T
3.0
Cob
PF
100
"»
25