2N4898 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(1A, 25W)

'^onauctot LPtoducti, Unc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MEDIUM-POWER PNP SILICON TRANSISTORS
..designed for driver circuits, switching and amplifier applications.
FEATURES:
* Low Collector-Emitter Saturation Voltage
VCE(sat)=0.6V(Max.)eic = 1.0A
* Excellent Safe Operating Area
* Gain Specified to lc= 1.0 Amp.
* 2N4900 Complementary to NPN 2N4912
MAXIMUM RATINGS
Characteristic
Symbol 2N4898 2N4899 2N4900
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PNP
2N4898
2N4899
2N4900
Unit
1 AMPERE
PNP SILICON
POWER TRANSISTOR
40-80 VOLTS
25 WATTS
Collector-Emitter Voltage
COIIector-Base Voltage
Emitter-Base Voltage
"CEO
40
60
"CBO
40
60
5.0
80
80
V
Collector Current-Continuous
-Peak
Base Current
Total Power Dissipation @TC= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
'CM
'STO
1.0
4.0
1.0
25
0.143
-65 to+200
w
w/°c
°c
TO-68
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance Junction to Case R6jc
7.0
25
I20
15
10
FIGURE-1 POWER DERATING
25 50 75 100 125 150 175 200
Tc , TEMPERATURE('C)
Unit
°c/w
PIN LEASE
2.SMITTER
COUECTORfCASE)
DIM ^MILLIMETERS
MIN MAX
A
30.60 32.52
B 13.85 14.16
C
6.54 7.22
D
9.50 10.50
E 17.26 18.46
F
0.76 092
G
1.38 1.65
H 24.16 2478
I 13.84 15.60
J
3.32 3.92
K
4.86 5.34
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