2N4234 Datasheet, PDF (2/2 Pages) Boca Semiconductor Corporation – GENERAL PURPOSE TRANSISTOR (PNP SILICON)

ELECTRICAL CHARACTERISTICS (coiTt)
Characteristics
ON CHARACTERISTICS'
Forward-Current Transfer Ratio
Ic = 100 mAdc, VCE= 1.0 Vdc
Ic = 250 mAdc, VCE = 1.0 Vdc
Ic = 500 mAdc, VCE = 1 .0 Vdc
Collector-Emitter Saturation Voltage
Ic= l.OAdc, IB = 100 mAdc
Ic = 500 mAdc, IB = 50 mAdc
Base-Emitter Saturation Voltage
Ic = 500 mAdc, IB = 50 mAdc
Ic= 1.0 Adc,I B = 100 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
Ic = 100 mAdc, VCE= 10 Vdc, f = 10 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, f = 100 MHz
SAFE OPERATING AREA
DC Tests
Tc = +25°C, 1 cycle, t > 0.5 s
Test 1
VCE = 6.0 Vdc.Ic = l.OAdc
Test 2
VCE = 12 Vdc,Ic = 500 mAdc
Test 3
VCE = 30 Vdc, Ic = 166 mAdc 2N4234
VCE = 30 Vdc, Ic = 166 mAdc 2N4235
VCE = 30 Vdc, Ic " 166 mAdc 2N4236
(3) Pulse Test: Pulse Width = 300|ns, Duty Cycle < 2.0%.
Symbol
hFE
VcE(sat)
VfiEfsat)
IhJ
C0bo
Min. Max.
Unit
40
30
150
20
0.6
Vdc
0.4
1.1
Vdc
1.5
3.0
100
pF