2N4234 Datasheet, PDF (1/2 Pages) Boca Semiconductor Corporation – GENERAL PURPOSE TRANSISTOR (PNP SILICON)

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
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NPN POWER AMPLIFIER SILICON TRANSISTOR
Devices
2N4234
2N4235
2N4236
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
VEBO
Collector Current
Ic
Base Current
IB
Total Power Dissipation @TA = 25°C(" _PT
@TC = 25°C(2)
Operating & Storage Junction Temperature _{Tj, Tstg}
1) Derate linearly 5.7 mW/°C for TA > +25°C
2) Derate linearly 34 mW/°C for Tc > +25°C
2N4234 2N4235 2N4236
40
60
80
40
60
80
7.0
1.0
0.5
1.0
6.0
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
"C
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted)
Characteristics
Symbol
Min.
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Ic = 100 mAdc
2N4234
2N4235
2N4236
40
V(BR)CEO
60
80
Collector-Emitter Cutoff Current
VCE = 30 Vdc
VCE = 40 Vdc
2N4234
ICEO
2N4235
VCE = 60 Vdc
2N4236
Collector-Emitter Cutoff Current
VCE = 40 Vdc, VBE =1.5 Vdc
2N4234
VCE = 60 Vdc, VBE = 1.5 Vdc
2N4235
ICEX
VCE = 80 Vdc, VBE = 1.5 Vdc
2N4236
Collector-Base Cutoff Current
VCE = 40 Vdc
VCE = 60 Vdc
2N4234
2N4235
ICBO
VCE = 80 Vdc
2N4236
Emitter-Base Cutoff Current
VBE = 7.0 Vdc
IEBO
TO-39*
*See appendix A for
package outline
Max.
Unit
Vdc
1.0
mAdc
1.0
1.0
100
100
riAdc
100
100
100
r)Adc
100
0.5
mAdc
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