2N4231A Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(5A,75W)

2N4231A Thru 2N4233A NPN / 2N6312 Thru 2N6314 PNP
ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted )
Characteristic
Symbol
Mln
Max
Unit
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
VCEO(n»)
( lc - 1 00 mA, I. = 0 )
2N4231 A.2N631 2
40
V
2N4232A.2N6313
60
2N4233A.2N6314
80
Collector Cutoff Current
( Vel = 30 V, I. = 0 )
< Vel = 50 V, I, = 0 )
( Vcs = 70 V, I. - 0 )
'CEO
2N4231 A.2N631 2
2N4232A.2N631 3
2N4233A.2N6314
mA
1.0
1.0
1.0
Collector-Emitter Leakage Current
( Ve. = 40 V,V.B-B-1 .5 V )
'CEX
2N4231 A.2M631 2
( V- = 60V.V.?":-! . 5 V )
2N4232A.2N631 3
( Vei = 80 V,V^-1:5 V )
2N4233A.2N6314
< VM = 40 V.V ™-1.5 V ,Te = 125°C ) 2N4231A.2N6312
( vH - 60 V,v!!^-1.5 V ,T! =• 125°C ) 2N4232A.2N6313
( V°| = 80 V.V^'1-5 V .T* = 125'C ) 2N4233A.2N6314
mA
0.1
0.1
0.1
1.0
1.0
1.0
Collector Cutoff Current
( V6i * 40 V, I, = 0 )
(V^^eOV, lt =0)
( Vei = 80 V, I, = 0 )
ICBO
2N4231 A.2N631 2
2N4232A.2N6313
2N4233A.2N6314
uA
50
50
50
Emitter Cutoff Current
(VEB = 5.0V,IC=0)
'EBO
mA
0.5
ON CHARACTERISTICS (1)
DC Current Gain
(IC-0.5A,VC.-2.0V)
(lc = 1.SA,Va,=»2.0V)
(le-3.0A,Vc, = 2.0V)
(le = 5.0A,Vel = 4.0V)
Collector-Emitter Saturation Voltage
(lc» 1.5 A, I, -0.16 A)
(les3.0A,l. = 0.3A)
(IC = 5.0A.I.= 1.25A)
Base-Emitter Saturation Voltage
(le=1.5A,Vel = 2.0V)
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product (2)
( lc =0.5 A VOE =10 V. f =1.0 MHz )
Output Capacitance
( V^ -10 V, \ *0, f • 0.1 MHz )
Small-Signal Current Gain
( lc =0.5 A, VCE =10 V, f -1.0 KHz )
(1) Pulse Test Pulse width • 300 us , Duty Cycle ^ 2.0%
hFE
40
25
10
4.0
VCE,-«
VBE<on,
'T
4.0
C,*
h*
20
100
V
0.7
2.0
4.0
V
1.4
MHz
PF
300