2N4231A Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(5A,75W)

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COMPLEMENTARY SILICON
MEDIUM-POWER TRANSISTORS
..designed for general-purpose power amplifier and switching
applications.
FEATURES:
* Low Collector-Emitter Saturation Voltage
vcEi»tf°-7 V (Max.) @ lc = 1.5 A
'Excellent DC Current Gain
hFE = 25-100 @ lc = 1.5 A
* Low Leakage Current- lcex =0.1 mA(Max)
MAXIMUM RATINGS
Characteristic
Symbol 2N4231A 2N4232A 2N4233A Unit
2N6312 2N6313 2N6314
Collector-Emitter Voltage
VCEO
40
60
COIIector-Base Voltage
VCBO
40
60
Emitter-Base Voltage
VEBO
5.0
Collector Current-Continuous
5.0
-Peak
IC'cM
10
Base Current
2.0
'B
Total Power Dissipation @TC= 25°C _PO
75
Derate above 25°C
0.43
80
V
80
V
V
A
A
W
W/°C
Operating and Storage Junction
Temperature Range
Tj '^STO
- 65 to 4-200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance Junction to Case Rejc
2.32
Unit
°c/w
80
2 70
0I
| 50
1 40
o 30
Z 20
10
FIGURE-1 POWER DERATING
0 25 50 75 100 125 150 175 200
Tc, TEMPERATURE(eC)
NPN
2N4231A
2N4232A
2N4233A
PNP
2N6312
2N6313
2N6314
5 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTOR
40-80 VOLTS
75 WATTS
TO-66
PN1.BASE
2.0MTTER
COLLECTOR(CASE>
MILLIMETERS
DIM
WIN MAX
A 30.60 32.52
B 13.85 14.16
C
8.54 7.22
D
9.50 10.50
E 17,28 18.46
F
0.76 0.92
G
1.38 1.66
H 24.16 24.78
I 13.84 15.60
J
332 3.92
K
4.86 5.34