NJL6401R-3 Datasheet, PDF (1/7 Pages) New Japan Radio – COBP High Speed Photo Diode

NJL6401R-3
COBP High Speed Photo Diode
GENERAL DESCRIPTION
The NJL6401R-3 is a high-speed PIN photodiode capable of detecting in a wide wavelength range of up to
infrared light from the blue-violet light.
The features are low wavelength dependence and fast fall-time.
An ultra-small and thin package of COBP is adopted, and providing high efficient space-saving.
.
FEATURES
• Corresponding to three wavelength (=405nm/650nm/780nm)
• Short rise-time, fall-time
2ns typ. (=405nm/650nm/780nm, VR=2.5V, 10-90%)
• High speed
250MHz ( =780nm)
300MHz ( =650nm)
350MHz ( =405nm)
• Miniature, thin package 1.2mmX1.7mmX0.8mm
• Active area
0.7mmX0.7mm
APPLICATIONS
• Laser monitor for Blu-ray, etc.
• Monitor for RGB wavelength
• Photoelectric switch, Space light transmitting, etc.
ABSOLUTE MAXIMUM RATINGS (Ta=25C)
PARAMETER
Reverse Voltage
Operating Temperature
Storage Temperature
Reflow Soldering Temperature
SYMBOL
VR
Topr
Tstg
Tsol
RATINGS
35
-30 to +85
-40 to +100
255
UNIT
V
C
C
C
ELECTRO-OPTICAL CHARACTERISTICS (Ta=25C)
PARAMETER
Dark Current
Forward Voltage
Capacitance
Peak Wavelength
Sensitivity
Rise time, Fall time
Cut off Frequency
SYMBOL
ID
VF
Ct
P
S
tr/tf
fc
TEST CONDITION
VR=10V
IF=1mA
VR=2.5V, f=1MHz
—
VR=2.5V, =780nm
VR=2.5V, =650nm
VR=2.5V, =405nm
VR=2.5V, =780nm, 10-90%, 1mW
VR=2.5V, =650nm, 10-90%, 1mW
VR=2.5V, =405nm, 10-90%, 1mW
VR=2.5V, =780nm, RL=50-3dB
VR=2.5V, =650nm, RL=50-3dB
VR=2.5V, =405nm, RL=50-3dB
MIN TYP MAX UNIT
—
0.1
2.0
nA
—
—
1.0
V
—
4
—
pF
—
800
—
nm
0.37 0.47
—
A/W
0.34 0.42
—
A/W
0.22 0.28
—
A/W
—
2
—
ns
—
2
—
ns
—
2
—
ns
—
250
—
MHz
—
300
—
MHz
—
350
—
MHz

20.June.2014 Rev.2.2
-1-