PDMB400BS12 Datasheet, PDF (4/4 Pages) Nihon Inter Electronics Corporation – IGBT Module-Dual

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QS043-402-20373（5/5）
Fig.13- Forward Characteristics of Free Wheeling Diode
800
(Typical)
600
TC=25°C
TC=125°C
400
200
Fig.14- Reverse Recovery Characteristics (Typical)
1000
IF=400A
TC=25°C
TC=125°C
trr
300
100
IRrM
0
0
1
2
3
4
Forward Voltage VF (V)
30
0
400
800
1200 1600 2000 2400 2800
-di/dt (A/µs)
Fig.15- Reverse Bias Safe Operating Area (Typical)
2000
RG=3.9(, VGE=±15V, TC=125°C
1000
300
100
30
10
3
1
0.3
0.1
0
200
400
600
800
1000 1200 1400
Collector to Emitter Voltage V CE (V)
3x10^-1
1x10^-1
3x10^-2
1x10^-2
3x10^-3
1x10^-3
3x10^-4
10^-5
Fig.16- Transient Thermal Impedance
FRD
IGBT
TC=25°C
1 Shot Pulse
10^-4
10^-3
10^-2
10^-1
1
10¹
Time t (s)
01
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