PDMB400BS12 Datasheet, PDF (2/4 Pages) Nihon Inter Electronics Corporation – IGBT Module-Dual

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QS043-402-20373（3/5）
800
700
600
500
400
300
200
100
0
0
16
14
12
10
8
6
4
2
0
0
Fig.1- Output Characteristics (Typical)
TC=25°C
VGE=20V
12V
11V
15V
10V
9V
8V
1
2
3
4
Collector to Emitter Voltage VCE (V)
7V
5
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25°C
IC=200A
800A
400A
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
800
700
600
500
400
300
200
100
0
0
16
14
12
10
8
6
4
2
0
0
Fig.2- Output Characteristics (Typical)
TC=125°C
VGE=20V
12V
15V
11V
10V
9V
8V
7V
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Fig.4- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125°C
IC=200A
400A
800A
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
800
16
RL=1.5(
TC=25°C
700
14
600
12
500
10
400
VCE=600V
8
300
6
400V
200
200V
4
100
2
0
0
0
500
1000
1500
2000
2500
3000
Total Gate Charge Qg (nC)
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
300000
100000
VGE=0V
f=1MHZ
TC=25°C
30000
Cies
10000
3000
Coes
1000
300
Cres
100
0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
01
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