PD7M440L Datasheet, PDF (4/4 Pages) Nihon Inter Electronics Corporation – MOSFET MODULE Dual 50A 450V/550V

P^çD7M440L/441L, P2H7M440L/441L
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Fig.7- Drain Current vs. Switching Time (Typical)
Fig.8- Source to Drain Diode
Forward Characteristics (Typical)
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1000
100
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300
80
td(off)
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tf
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td(on)
60
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100
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T_J=125℃
T_J= 2 5 ℃
40
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tr
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30
VDD=250V
20
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RG=7Ω
TC=25℃
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10
80μs Pulse Test
0
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2
5
10
20
50
100
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Drain Current ID (A)
0
0.4
0.8
1.2
Source to Drain Voltage VSD (V)
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Fig.9- Reverse Recovery Characteristics (Typical)
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3000
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trr
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1000
…IS=25A
― IS=50A
TJ= 1 5 0 ℃
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Fig.10- Maximum Safe Operating Area
200
100
10μs
50
100μs
20
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300
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100
IRrM
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30
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0
100
200
300
400
500
600
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-dis/dt (A/μs)
10
1ms
Operation in this area
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is limited by R_DS(on)
2
1
0.5 ^TC=25℃
Tj=150℃MAX
Single Pulse
441L
0.2
1
3
10
30
100
300
Drain to Source Voltage V DS (V)
10ms
DC
440L
1000
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Fig.11- Normalized Transient Thermal Impedance (MOSFET)
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1x10 ¹
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3
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1
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3x10^-1
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1x10^-1
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3x10^-2
Per Unit Base
R_th(j-c)= 0.36℃/W
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1 Shot Pulse
1x10^-2
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10^-5
10^-4
10 ^-3
10 ^-2
10^-1
1
10¹
PULSE DURATION t (s)
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