PD7M440L Datasheet, PDF (1/4 Pages) Nihon Inter Electronics Corporation – MOSFET MODULE Dual 50A 450V/550V

MOSFET MODULE Dual 50A 450V/500V
FEATURES
* Dual MOS FETs Cascaded Circuit
* Low On-Resistance and Switching
Dissipation
TYPICAL APPLICATIONS
* Power Supply for the Communications and
the Induction Heating
Circuit
PD7M441L / PD7M440L
OUTLINE DRAWING
Dimension(mm)
108.0
MAXMUM RATINGS
Approximate Weight : 220g
Ratings
Symbol
PD7M441L
PD7M440L
Unit
Drain-Source Voltage (VGS=0V)
VDSS
Gate - Source Voltage
VGSS
Continuous Drain Current
Duty=50%
D.C.
ID
Pulsed Drain Current
IDM
Total Power Dissipation
PD
Operating Junction Temperature Range
Tjw
Storage Temperature Range
Tstg
Isolation Voltage Terminals to Base AC, 1 min.)
VISO
Mounting Torque
Module Base to Heatsink
Bus Bar to Main Terminals
FTOR
450
500
+/ - 20
50 (Tc=25°C)
35 (Tc=25°C)
100 Tc=25°C)
350 Tc=25°C)
-40 to +150
-40 to +125
2000
3.0
2.0
V
V
A
A
W
°C
°C
V
N•m
ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Zero Gate Voltage Drain Current
IDSS
VDS=VDSS,VGS=0V
Tj=125°C, VDS=VDSS,VGS=0V
Gate-Source Threshold Voltage
VGS(th) VDS=VGS, ID=1mA
Gate-Source Leakage Current
IGSS VGS=+/- 20V,VDS=0V
Static Drain-Source On-Resistance
rDS(on) VGS=10V, ID=25A
Forward Transconductance
gfs VDS=15V, ID=25A
Input Capacitance
Cies
Output Capacitance
Coss VDS=25V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD= 1/2VDSS
ID=25A
VGS= -5V, +10V
RG= 7ohm
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
-
-
-
-
1.0
4.0
mA
2.0
3.1
4.0
V
-
-
1.0
µA
-
110 120 m-ohm
-
45
-
S
-
9.0
-
nF
-
1.7
-
nF
-
0.32
-
nF
-
120
-
-
-
80
240
-
-
ns
-
50
-
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Continuous Source Current
IS
Pulsed Source Current
ISM
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery
Qr
THERMAL CHARACTERISTICS
D.C.
-
IS=50A
IS=50A, -dis/dt=100A/µs
-
-
35
A
-
-
100
A
-
-
2.0
V
-
900
-
ns
-
25
-
µC
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Thermal Resistance, Junction to Case
Rth(j-c)
MOS FET
Diode
-
-
Thermal Resistance, Case to Heatsink
Rth(c-f)
Mounting surface flat, smooth, and greased
-
-
0.36
-
0.36 °C/W
-
0.1