PRHMB200A6A_1 Datasheet, PDF (3/3 Pages) Nihon Inter Electronics Corporation – 200A 600V

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Fig.7- Series Gate Impedance vs. Switching Time (Typical)
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5
VCC=300V
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I C= 2 0 0 A
VG=±15V
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2 TC=25℃
toff
ton
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1
tr
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Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
400
TC=25℃
TC=125℃
350
300
250
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0.5
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0.2
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0.1
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tf
200
150
100
50
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0.05 ₁
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10
100
Series Gate Impedance RG (Ω)
0
0
1
2
3
4
Forward Voltage VF (V)
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Fig.9- Reverse Recovery Characteristics (Typical)
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500
IF=200A
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TC= 2 5 ℃
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200
trr
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100
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50
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20
IRrM
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10
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5
0
200
400
600
800
1000
1200
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-di/dt (A/μs)
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1000
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1 ₀
Fig.10- Reverse Bias Safe Operating Area (Typical)
R G= 3 .6 Ω
VGE = ± 1 5 V
TC≦1 2 5 ℃
200
400
600
800
Collector to Emitter Voltage V CE (V)
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Fig.11- Transient Thermal Impedance
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5x10 ^-1
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2x10 ^-1
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1x10 ^-1
FRD
IGBT
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5x10 ^-2
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2x10 ^-2
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1x10 ^-2
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5x10 ^-3
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2x10 ^-3
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TC= 2 5 ℃
1 Shot Pulse
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1x10
-3
10
-5
10 ^-4
10 ^-3
10 ^-2
10 ^-1
1
10 ¹
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Time t (s)
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