PRHMB200A6A_1 Datasheet, PDF (2/3 Pages) Nihon Inter Electronics Corporation – 200A 600V

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400
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300
Fig.1- Output Characteristics (Typical)
TC= 2 5 ℃
VGE=20V 12V
15V
10V
ç
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ç
200
9V
ç
ç
100
ç
ç
8V
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0
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0
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7V
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
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ç
ç
16
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14
ç
ç
12
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125℃
IC=80A
400A
200A
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10
ç
8
ç
ç
6
ç
4
ç
ç
2
ç
0
0
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ç
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
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Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
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100000
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50000
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Cies
Coes
VGE = 0 V
f=1MHZ
TC=25℃
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20000
Cres
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10000
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5000
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2000
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1000
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500
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200
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100
0.2
0.5 1
2
5 10 20
50 100 200
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Collector to Emitter Voltage VCE (V)
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ç
ç
ç
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Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16
TC= 2 5 ℃
IC=80A
400A
14
200A
12
10
8
6
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
16
RL=1.5Ω
TC=25℃
350
14
300
12
250
10
200
8
VCE= 3 0 0 V
150
6
200V
100
100V
4
50
2
0
0
0
150
300
450
600
750
900
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1
VCC= 3 0 0 V
0.9 RG=3.6Ω
VGE=±15V
0.8 TC=25℃
0.7
0.6
0.5
toff
0.4
0.3
ton
0.2
tf
0.1
0
0
50
100
150
Collector Current IC (A)
tr
200