PHMB800B12 Datasheet, PDF (3/3 Pages) Nihon Inter Electronics Corporation – IGBT Module-Dual

ＰＨＭＢ８００Ｂ１２
QS043-401-M0056 (4/4)
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
10
VCC=600V
IC=800A
5 _VGE=±15V
TC=25℃
toff
2
ton
1
tr
0.5
tf
0.2
0.1
0.05
0.05 0.1 0.2
0.5
1
2
5
Series Gate Impedance RG (Ω)
10 20
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
1600
TC=25℃
TC=125℃
1400
1200
1000
800
600
400
200
0
0
1
2
3
4
Forward Voltage VF (V)
Fig.9- Reverse Recovery Characteristics (Typical)
1000
IF=800A
TC= 2 5 ℃
500
trr
200
100
IRrM
50
0
800
1600
2400
3200
4000
4800
-di/dt (A/μs)
5000
2000
1000
500
200
100
50
20
10
5
2
1
0.5
0.2
0
Fig.10- Reverse Bias Safe Operating Area
RG=0.5Ω
VGE=±15V
TC≦125℃
400
800
1200
1600
Collector to Emitter Voltage V CE (V)
-1
2x10
1x10^-1
-2
5x10
2x10^-2
1x10^-2
-3
5x10
2x10^-3
-3
1x10
5x10^-4
2x10^-4
1x10^-4 _-5
10
fig11-Tansient Thermal Impedance
FRD
IGBT
Tc=25℃
1 Shot
-4
-3
-2
-1
10
10
10
10
1
10¹
Time t （s）
日本インター株式会社