PHMB800B12 Datasheet, PDF (2/3 Pages) Nihon Inter Electronics Corporation – IGBT Module-Dual

ＰＨＭＢ８００Ｂ１２
QS043-401-M0056 (3/4)
1600
1400
1200
1000
800
600
400
200
0
0
Fig.1- Output Characteristics (Typical)
VGE=20V
12V
TC=25℃
10V
15V
9V
8V
2
4
6
8
Collector to Emitter Voltage VCE (V)
7V
10
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC= 1 2 5 ℃
16
IC= 4 0 0 A
1600A
14
800A
12
10
8
6
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
1000000
500000
200000
100000
VGE=0V
f=1MHZ
TC= 2 5 ℃
Cies
50000
20000
10000
5000
Co e s
2000
1000
500
200
100
0.1 0.2
Cres
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC= 2 5 ℃
16
IC= 4 0 0 A
1600A
14
800A
12
10
8
6
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
800
16
RL=0.75Ω
TC=25℃
700
14
600
12
500
10
400
8
VCE=600V
300
6
400V
200
4
200V
100
2
0
0
0
1000
2000
3000
4000
5000
6000
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1.4
1.2
tOFF
1
VCC=600V
RG=0.5Ω
VGE=±15V
TC=25℃
0.8
tf
0.6
0.4
0.2 _tON
tr
0
0
200
400
600
800
Collector Current IC (A)
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