PDMB100B12C2 Datasheet, PDF (3/3 Pages) Nihon Inter Electronics Corporation – IGBT MODULE Dual 100A 1200V

IGBT MODULE Dual 100A 1200V
PDMB100B12C2
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Fig.7- Series Gate Impedance vs. Switching Time (Typical)
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10
VCC=600V
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IC=100A
toff
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5 _VGE=±15V
TC=25℃
ton
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2
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tr
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
200
TC=25℃
TC=125℃
150
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1
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0.5
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tf
100
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0.2
50
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0.1
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0.05
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5
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10
20
50
100
200
Series Gate Impedance RG (Ω)
0
0
1
2
3
4
Forward Voltage VF (V)
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Fig.9- Reverse Recovery Characteristics (Typical)
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500
I F= 1 0 0 A
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TC= 2 5 ℃
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200
trr
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100
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50
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20
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10
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5
IRrM
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2
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10
100
200
300
400
500
600
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-di/dt (A/μs)
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
Fig.10- Reverse Bias Safe Operating Area
RG=10Ω
VGE=±15V
TC≦125℃
400
800
1200
1600
Collector to Emitter Voltage V CE (V)
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Fig.11- Transient Thermal Impedance
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1
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5x10 ^-1
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2x10 ^-1
FRD
IGBT
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1x10 ^-1
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5x10 ^-2
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2x10 ^-2
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1x10 ^-2
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5x10 ^-3
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TC=25℃
1 Shot Pulse
2x10 ^-3
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10 ^-5
10 ^-4
10 ^-3
10 ^-2
10 ^-1
1
10 ¹
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Time t (s)
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