PDMB100B12C2 Datasheet, PDF (2/3 Pages) Nihon Inter Electronics Corporation – IGBT MODULE Dual 100A 1200V

IGBT MODULE Dual 100A 1200V
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Fig.1- Output Characteristics (Typical)
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200
TC=25℃
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VGE=20V
12V
10V
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15V
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150
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9V
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100
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8V
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50
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7V
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0
0
2
4
6
8
10
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Collector to Emitter Voltage VCE (V)
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Fig.3- Collector to Emitter On Voltage
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16
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vs. Gate to Emitter Voltage (Typical)
TC=125℃
IC=50A
200A
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14
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12
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100A
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10
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8
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6
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4
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2
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0
0
4
8
12
16
20
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Gate to Emitter Voltage VGE (V)
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Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
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50000
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20000
VGE=0V
f=1MHZ
TC=25℃
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10000
Cies
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5000
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2000
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1000
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500
Coes
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200
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Cres
100
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50 _{0.1 0.2}
0.5 1
2
5 10 20
50 100 200
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Collector to Emitter Voltage VCE (V)
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Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16
TC=25℃
IC=50A
200A
14
100A
12
10
8
6
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
800
16
RL=6Ω
TC=25℃
700
14
600
12
500
10
400
8
VCE=600V
300
6
400V
200
4
200V
100
2
0
0
0
150
300
450
600
750
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1.6
1.4
1.2
tOFF
1
VCC=600V
RG=10Ω
VGE=±15V
TC=25℃
0.8
0.6
tf
0.4
0.2 tON
tr
0
0
25
50
75
100
Collector Current IC (A)
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