PDMB100A6 Datasheet, PDF (3/3 Pages) Nihon Inter Electronics Corporation – IGBT MODULE Dual 100A 600V

PDMB100A6
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
5
VCC=300V
IC=100A
VG=±15V
2 ^TC=25℃
toff
ton
1
tr
0.5
tf
0.2
0.1
0.05
1
10
100
Series Gate Impedance RG (Ω)
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
200
TC=25℃ TC=125℃
180
160
140
120
100
80
60
40
20
0
0
1
2
3
4
Forward Voltage VF (V)
Fig.9- Reverse Recovery Characteristics (Typical)
500
IF=100A
TC=25℃
200
trr
100
50
20
IRrM
10
50
100
200
300
400
500
600
-di/dt (A/μs)
1000
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
Fig.10- Reverse Bias Safe Operating Area (Typical)
RG=7.5Ω
VGE=±15V
TC≦125℃
200
400
600
800
Collector to Emitter Voltage V CE (V)
1
5x10 ^-1
2x10 ^-1
1x10 ^-1
5x10 ^-2
2x10 ^-2
1x10 ^-2
5x10 ^-3
2x10 ^-3
1x10
-3
10
-5
Fig.11- Transient Thermal Impedance
FRD
IGBT
TC=25℃
1 Shot Pulse
10 ^-4
10 ^-3
10 ^-2
10 ^-1
1
10 ¹
Time t (s)