PDMB100A6 Datasheet, PDF (2/3 Pages) Nihon Inter Electronics Corporation – IGBT MODULE Dual 100A 600V

PDMB100A6
Fig.1- Output Characteristics (Typical)
200
VGE=20V 12V
TC=25℃
15V
10V
150
100
9V
50
8V
7V
0
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16
TC= 1 2 5 ℃
IC=40A
200A
14
100A
12
10
8
6
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
50000
20000
10000
Cies
Coes
Cres
VGE = 0 V
f=1MHZ
TC= 2 5 ℃
5000
2000
1000
500
200
100
50
0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16
TC=25℃
IC=40A
200A
14
100A
12
10
8
6
4
2
00
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
16
R L= 3 Ω
350 ^TC=25℃
14
300
12
250
10
200
8
VCE=300V
150
6
200V
100
4
100V
50
2
0
0
0
100
200
300
400
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1
VCC= 3 0 0 V
0.9 RG=7.5Ω
VGE = ± 1 5 V
0.8 TC=25℃
0.7
0.6
0.5
toff
0.4
0.3
ton
0.2
tf
0.1
tr
0
0
20
40
60
80
100
Collector Current IC (A)