PHMB800A6 Datasheet, PDF (2/3 Pages) Nihon Inter Electronics Corporation – IGBT MODULE Single 800A 600V

PHMB800A6
Fig.1- Output Characteristics (Typical)
1600
VGE=20V 12V
TC=25℃
15V
10V
1200
800
9V
400
0
0
16
14
12
10
8
6
4
2
00
8V
7V
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125℃
IC= 3 2 0 A
1600A
800A
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
500000
200000
100000
Cies
Coes
Cres
VGE=0V
f=1MHZ
TC=25℃
50000
20000
10000
5000
2000
1000
500
0.2
0.5 1
2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16
TC= 2 5 ℃
IC= 3 2 0 A
1600A
14
800A
12
10
8
6
4
2
0
0
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
16
RL=0.375Ω
350 ^TC=25℃
14
300
12
250
10
200
8
VCE= 3 0 0 V
150
6
200V
100
100V
4
50
2
0
0
0
600
1200
1800
2400
3000
3600
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1
VCC= 3 0 0 V
0.9 RG=0.6Ω
VGE=±15V
0.8 TC=25℃
0.7
toff
0.6
0.5
ton
0.4
0.3
tr
0.2
tf
0.1
0
0
200
400
600
800
Collector Current IC (A)