PHMB800A6 Datasheet, PDF (1/3 Pages) Nihon Inter Electronics Corporation – IGBT MODULE Single 800A 600V

IGBT MODULE Single 800A 600V
CIRCUIT
PHMB800A6
OUTLINE DRAWING
MAXMUM RATINGS (Tc=25°C)
Item
Symbol
PHMB800A6
Collector-Emitter Voltage
VCES
Gate - Emitter Voltage
VGES
Collector Current
DC
IC
1 ms
ICP
Collector Power Dissipation
PC
Junction Temperature Range
Tj
Storage Temperature Range
Tstg
Isolation Voltage Terminal to Base AC, 1 min.)
VISO
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
FTOR
M4
M8
600
+/ - 20
800
1600
2700
-40 to +150
-40 to +125
2500
3
1.4
10
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Characteristic
Symbol
Test Condition
Min.
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
ICES
VCE=600V,VGE=0V
-
IGES
VGE=+/- 20V,VCE=0V
-
VCE(sat) IC=800A,VGE=15V
-
VGE(th) VCE=5V,IC=800mA
4.0
Cies VCE=10V,VGE=0V,f=1MHz
-
Switching Time
Rise Time
Turn-on Time
Fall Time
Turn-off Time
tr
VCC= 300V
-
ton
RL= 0.375 ohm
-
tf
RG= 0.6 ohm
-
toff
VGE= +/- 15V
-
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item
Symbol
Rated Value
Forward Current
DC
IF
1 ms
IFM
800
1800
Dimension(mm)
Approximate Weight : 650g
Unit
V
V
A
W
°C
°C
V
N•m
Typ.
-
-
2.1
-
80,000
0.25
0.45
0.2
0.6
Max.
8.0
1.0
2.6
8.0
-
0.45
0.85
0.35
0.8
Unit
mA
µA
V
V
pF
µs
Unit
A
Characteristic
Symbol
Peak Forward Voltage
VF
Reverse Recovery Time
trr
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IGBT
DIODE
Test Condition
IF=800A,VGE=0V
IF=800A,VGE=-10V,di/dt=800A/µs
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min. Typ. Max. Unit
-
1.9
2.4
V
-
0.15
0.25
µs
Min. Typ. Max. Unit
-
-
-
-
0.045
0.11
°C/W