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VS-8ETH06PBF Datasheet, PDF (4/9 Pages) Nichicon corporation – Hyperfast Rectifier, 8 A FRED Pt®
VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3
www.vishay.com
Vishay Semiconductors
180
170
160
DC
150
Square wave (D = 0.50)
140
Rated VR applied
130
See note (1)
120
0
2
4
6
8
10
12
IF(AV) - Average Forward Current (A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
180
160
20
18
16
RMS limit
14
12
10
8
6
4
DC
2
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
0
0
2
4
6
8
10
12
IF(AV) - Average Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
60
VR = 390 V
TJ = 125 °C
50
TJ = 25 °C
140
40
DC
120
Square wave (D = 0.50)
Rated VR applied
100
80
0
See note (1)
2
4
6
8 10 12 14
IF(AV) - Average Forward Current (A)
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
30
20
IF = 16 A
IF = 8 A
10
100
1000
dIF/dt (A/µs)
Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt
400
VR = 390 V
350 TJ = 125 °C
TJ = 25 °C
300
250
IF = 16 A
IF = 8 A
200
150
100
50
0
100
1000
dIF/dt (A/µs)
Fig. 10 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 02-Jan-12
4
Document Number: 94026
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