VS-8ETH06PBF Datasheet, PDF (1/9 Pages) Nichicon corporation – Hyperfast Rectifier, 8 A FRED Pt®

VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3
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Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt^®
TO-220AC
Base
cathode
2
TO-220 FULL-PAK
1
3
Cathode Anode
VS-8ETH06PbF
VS-8ETH06-N3
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_rr typ.
T_J max.
Diode variation
1
3
Cathode Anode
VS-8ETH06FPPbF
VS-8ETH06FP-N3
TO-220AC, TO-220FP
8A
600 V
2.4 V
18 ns
175 °C
Single die
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Fully isolated package (V_INS = 2500 V_RMS)
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
SYMBOL
V_RRM
Average rectified forward current
FULL-PAK
I_F(AV)
Non-repetitive peak surge current
FULL-PAK
Repetitive peak forward current
Operating junction and storage temperatures
I_FSM
I_FM
T_J, T_Stg
TEST CONDITIONS
T_C = 144 °C
T_C = 108 °C
T_J = 25 °C
VALUES
600
8
90
100
16
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
V_BR,
V_R
I_R = 100 μA
Forward voltage
I_F = 8 A
V_F
I_F = 8 A, T_J = 150 °C
Reverse leakage current
V_R = V_R rated
I_R
T_J = 150 °C, V_R = V_R rated
Junction capacitance
C_T
V_R = 600 V
Series inductance
L_S
Measured lead to lead 5 mm from package body
MIN.
600
-
-
-
-
-
-
TYP.
-
2.0
1.3
0.3
55
17
8.0
MAX.
-
2.4
1.8
50
500
-
-
UNITS
V
μA
pF
nH
Revision: 02-Jan-12
1
Document Number: 94026
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