PHMB600BS12_15 Datasheet, PDF (4/4 Pages) National Instruments Corporation – IGBT

ＰＨＭＢ６００ＢＳ１２
ＰＨＭＢ６００ＢＳ１２Ｃ
QS043-402-（5/5）
Fig.13- Forward Characteristics of Free Wheeling Diode
(Typical)
1200
1000
800
TC=25°C
TC=125°C
Fig.14- Reverse Recovery Characteristics (Typical)
1000
IF=600A
TC=25°C
TC=125°C
trr
300
600
IRrM
400
100
200
0
0
1
2
3
4
Forward Voltage VF (V)
30
0
600
1200
1800
2400
3000
3600
-di/dt (A/µs)
2000
1000
300
100
30
10
3
1
0.3
0.1
0
Fig.15- Reverse Bias Safe Operating Area
RG=2.7(, VGE=±15V, TC=125°C
200
400
600
800
1000 1200
Collector to Emitter Voltage V CE (V)
1400
3x10^-1
1x10^-1
3x10^-2
1x10^-2
3x10^-3
1x10^-3
3x10^-4
10^-5
Fig.16- Transient Thermal Impedance
FRD
IGBT
TC=25°C
1 Shot Pulse
10^-4
10^-3
10^-2
10^-1
1
10¹
Time t (s)
00
日本インター株式会社