PDMB200BS12_15 Datasheet, PDF (4/4 Pages) National Instruments Corporation – IGBT

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QS043-402-20371（5/5）
Fig.13- Forward Characteristics of Free Wheeling Diode
(Typical)
400
300
TC=25°C
TC=125°C
Fig.14- Reverse Recovery Characteristics (Typical)
1000
IF=200A
TC=25°C
TC=125°C
trr
300
200
100
IRrM
100
30
0
0
1
2
3
4
Forward Voltage VF (V)
10
0
400
800
1200
1600
2000
-di/dt (A/µs)
Fig.15- Reverse Bias Safe Operating Area (Typical)
1000
RG=7.5(, VGE=±15V, TC=125°C
500
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
200
400
600
800
1000 1200
Collector to Emitter Voltage V CE (V)
1400
1
3x10^-1
1x10^-1
3x10^-2
1x10^-2
3x10^-3
1x10^-3
3x10^-4
10^-5
Fig.16- Transient Thermal Impedance
FRD
IGBT
TC=25°C
1 Shot Pulse
10^-4
10^-3
10^-2
10^-1
1
10¹
Time t (s)
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