PDMB200BS12_15 Datasheet, PDF (3/4 Pages) National Instruments Corporation – IGBT

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QS043-402-20371（4/5）
Fig.7- Collector Current vs. Switching Time (Typical)
2
VCC=600V
RG=7.5(
VGE=±15V
1.6
TC=25°C
Resistive Load
tOFF
1.2
0.8 _tf
0.4
0
0
50
100
150
Collector Current IC (A)
tON
tr(V_CE)
200
Fig.9- Collector Current vs. Switching Time
10
3
tOFF
1
VCC=600V
RG=7.5(
VGE=±15V
TC=125°C
Inductive Load
tf
0.3
tON
0.1
tr(Ic)
0.03
0.01
0
50
100
150
200
250
Collector Current IC (A)
Fig.11- Collector Current vs. Switching Loss
60
VCC=600V
RG=7.5(
50 ^VGE=±15V
TC=125°C
Inductive Load
40
EON
30
EOFF
20
ERR
10
0
0
50
100
150
200
250
300
Collector Current IC (A)
Fig.8- Series Gate Impedance vs. Switching Time (Typical)
10
VCC=600V
IC=200A
VGE=±15V
3 ^TC=25°C
Resistive Load
1
toff
tf
0.3
ton
tr(V_CE)
0.1
0.03
3
10
30
100
Series Gate Impedance RG (()
Fig.10- Series Gate Impedance vs. Switching Time
10
VCC=600V
5 ^IC=200A
VGE=±15V
TC=125°C
2 ^{Inductive Load}
1
toff
0.5
ton
0.2
tf
0.1
0.05
tr(I_C)
0.02
3
10
30
50
Series Gate Impedance RG (()
Fig.12- Series Gate Impedance vs. Switching Loss
200
VCC=600V
IC=200A
100 ^VGE=±15V
TC=125°C
Inductive Load
EON
EOFF
30
ERR
10
3
3
10
30
50
Series Gate Impedance RG (()
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