PDMB150BS12_15 Datasheet, PDF (4/4 Pages) National Instruments Corporation – IGBT

ＰＤＭＢ１５０ＢＳ１２
QS043-402-20382（5/5）
Fig.13- Forward Characteristics of Free Wheeling Diode
300
(Typical)
250
TC=25°C
TC=125°C
200
150
100
50
0
0
1
2
3
4
Forward Voltage VF (V)
Fig.14- Reverse Recovery Characteristics (Typical)
1000
IF=150A
TC=25°C
TC=125°C
trr
300
100
IRrM
30
10
0
600
1200
-di/dt (A/µs)
1800
Fig.15- Reverse Bias Safe Operating Area (Typical)
1000
500
RG=10(, VGE=±15V, TC=125°C
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
200
400
600
800
1000 1200
Collector to Emitter Voltage V CE (V)
1400
1
5x10 ^-1
2x10 ^-1
1x10 ^-1
5x10 ^-2
2x10 ^-2
1x10 ^-2
5x10 ^-3
2x10 ^-3
1x10 ^-3
5x10^-4
10^-5
Fig.16- Transient Thermal Impedance
FRD
IGBT
TC=25°C
1 Shot Pulse
10^-4
10^-3
10^-2
10^-1
1
10¹
Time t (s)
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