PDMB150BS12_15 Datasheet, PDF (3/4 Pages) National Instruments Corporation – IGBT

ＰＤＭＢ１５０ＢＳ１２
QS043-402-20382（4/5）
Fig.7- Collector Current vs. Switching Time (Typical)
2
VCC=600V
RG=10(
VGE=±15V
1.6
TC=25°C
Resistive Load
1.2
tOFF
0.8
tf
0.4
0
0
25
50
75
100
Collector Current IC (A)
tON
tr(V_CE)
125
150
Fig.9- Collector Current vs. Switching Time
10
3
tOFF
1
VCC=600V
RG=10(
VGE=±15V
TC=125°C
Inductive Load
tf
0.3
tON
0.1
tr(Ic)
0.03
0.01
0
20
40
60
80
100 120 140 160
Collector Current IC (A)
Fig.11- Collector Current vs. Switching Loss
40
VCC=600V
RG=10(
VGE=±15V
TC=125°C
30 Inductive Load
EON
20
EOFF
ERR
10
0
0
50
100
150
200
Collector Current IC (A)
Fig.8- Series Gate Impedance vs. Switching Time (Typical)
10
VCC=600V
IC=150A
VGE=±15V
TC=25°C
3 ^{Resistive Load}
1
toff
ton
tf
0.3
tr(V_CE)
0.1
10
30
100
Series Gate Impedance RG (()
Fig.10- Series Gate Impedance vs. Switching Time
10
VCC=600V
5 ^IC=150A
VGE=±15V
TC=125°C
2 ^{Inductive Load}
1
toff
0.5
ton
0.2
0.1 ^tf
0.05
tr(I_C)
0.02
5
10
30
100
Series Gate Impedance RG (()
Fig.12- Series Gate Impedance vs. Switching Loss
200
VCC=600V
IC=150A
100 ^VGE=±15V
TC=125°C
Inductive Load
EON
30
EOFF
10
ERR
3
5
10
30
70
Series Gate Impedance RG (()
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