PDM5001_15 Datasheet, PDF (2/3 Pages) National Instruments Corporation – MOSFET

QS043-401M0545 (3/4)
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ç
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1000
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800
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Fig.1- Output Characteristics (Typical)
TC=25℃
VGS=10V
8V
6V
250μs PULSE TEST
4V
Fig.2- Drain to Source On Voltage
vs. Gate to Source Voltage (Typical)
TC=25℃
1
250μs PULSE TEST
0.9
0.8
0.7
ç
600
ç
ç
400
ç
ç
ç
200
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0.6
0.5
3.5V
0.4
0.3
0.2
3V
0.1
ID=500A
ID=250A
ID=120A
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0
0
0.4
0.8
1.2
1.6
2
2.4
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Drain to Source Voltage VDS (V)
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0
0
2
4
6
8
10
12
14
16
Gate to Source Voltage VGS (V)
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Fig.3- Drain to Source On Voltage
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vs. Junction Temperature (Typical)
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0.6
250μs PULSE TEST
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VGS=10V
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0.5
ç
ç
0.4
ID=500A
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Fig.4- Capacitance vs. Drain to Source Voltage (Typical)
500
Ciss
VGS=0V
f=1MHZ
TC=25℃
100
Coss
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0.3
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ç
0.2
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ç
0.1
ID=250A
ID=120A
Crss
10
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0
ç
-50
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0
50
100
150
Junction Temperature Tj (℃)
1
0.5
1
3
10
30 50
Drain to Source Voltage VDS (V)
ç
ç
ç
Fig.5- Gate Charge vs. Gate to Source Voltage (Typical)
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80
ID=500A
16
VDD=80V
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70
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60
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VDD=50V
VDD=20V
12
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50
Fig.6- Series Gate Impedance vs. Switching Time (Typical)
10
VDD=50V
ID=250A
TC=25℃
3
td(off)
tr
1
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40
ç
ç
30
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20
ç
10
ç
8
0.3
td(on)
0.1
tf
4
0.03
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0
0
0 500 1000 1500 2000 2500 3000 3500 4000 4500
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Total Gate Charge Qg (nC)
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0.01
1
3
10
Series Gate Impedance RG (Ω)
30
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