6N80 Datasheet, PDF (6/8 Pages) IXYS Corporation – N-Channel Enhancement Mode

SEMICONDUCTOR
■ TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
6N80 Series RRooHHSS
Nell High Power Products
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
V_DS
-
+
-
L
R_G
Driver
VDD
* ^{dv/dt controlled by RG}
V_GS
Same Type
as D.U.T.
* ^lSD ^{controlled by pulse period}
* ^{D.U.T.-Device under test}
Fig.2A Switching test circuit
R_L
V_DS
V_GS
R_G
V_DD
D.U.T.
10V
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
V_GS
(Driver)
l_SD
(D.U.T.)
V_DS
(D.U.T.)
P.W.
Period
P.W.
D=
Period
V_GS=10V
lFM, Body Diode forward current
di/dt
l_RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V_DD
Body Diode
Forward Voltage Drop
Fig.2B Switching Waveforms
V_DS
90%
10%
V_GS
t_d(ON)
t_R
t_d(OFF)
t_F
Fig.3A Gate charge test circuit
Fig.3B Gate charge waveform
Same Type as
50kΩ
D.U.T.
12V
0.2µF
0.3µF
V_DS
V_GS
3mA
D.U.T.
V_GS
10V
Q_GS
Q_G
Q_GD
Charge
www.nellsemi.com
Page 6 of 8