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6N80 Datasheet, PDF (1/8 Pages) IXYS Corporation – N-Channel Enhancement Mode
SEMICONDUCTOR
6N80 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(6A, 800Volts)
The Nell 6N80 is a three-terminal silicon
device with current conduction capability of 6A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 800V ,and max.
threshold voltage of 5 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications .
FEATURES
RDS(ON) = 2.00Ω @ VGS = 10V
Ultra low gate charge(88nC max.)
Low reverse transfer capacitance
(CRSS = 57pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
G
DS
TO-220AB
(6N80A)
GDS
TO-220F
(6N80AF)
D (Drain)
G
(Gate)
PRODUCT SUMMARY
ID (A)
6
VDSS (V)
800
RDS(ON) (Ω)
2.00 @ VGS = 10V
QG(nC) max.
88
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS
Gate to Source voltage
ID
Continuous Drain Current
TC=25°C
TC=100°C
IDM
Pulsed Drain current(Note 1)
IAR
Avalanche current(Note 1)
EAR
Repetitive avalanche energy(Note 1)
IAR=6A, RGS=50Ω, VGS=10V
EAS
Single pulse avalanche energy(Note 2)
IAS=6A, L=25mH
dv/dt
Peak diode recovery dv/dt(Note 3)
TO-220AB
PD
Total power dissipation (Derate above 25°C)
TC=25°C
TO-220F
TJ
Operation junction temperature
TSTG
TL
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS = 6A, VDD = 50V, L = 25mH, RGS = 27Ω, starting TJ=25°C.
3.ISD ≤ 7A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, starting TJ=25°C.
1.6mm from case
VALUE
UNIT
800
800
V
±30
6
3.8
A
24
6
16
mJ
480
2.0
V /ns
160 (1.28)
51 (0.41)
-55 to 150
-55 to 150
300
10 (1.1)
W(W/°C)
ºC
lbf.in (N.m)
www.nellsemi.com
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