N-HFA30PA40C Datasheet, PDF (4/5 Pages) Nell Semiconductor Co., Ltd – FRED Ultrafast Soft Recovery Diode, 2 x 15 A

SEMICONDUCTOR
N-HFA30PA40C ^RRooHHSS
Nell High Power Products
Fig6. Dynamic parameters vs. junction temperature
1.4
Qrr
1.2
trr
1.0
I_RRM
0.8
trr
0.6
0.4
Qrr
0.2
0.0
0 25 50 75 100 125 150
Junction temperature (°C),T_J
Fig.7 Maximum average forward current vs. case temperature
40
Duty cycle = 0.5
T_J =175°C
35
30
25
20
15
10
5
0
25 50
75 100 125 150 175
Case temperature (°C)
Fig.8 Junction capacitance vs. reverse voltage
200
150
100
50
0
1
10
100 200
reverse voltage (V), V_R
Fig.9 Reverse recovery parameter test circuit
V_R = 200 V
L = 70 µH
0.01Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig.10 Reverse recovery waveform and definitions
I_F
0
(3)
t_rr
t_a
t_b
(2)
I_RRM
(4)
Q_rr
0.5 IRRM
dI_(rec)M/dt ⁽⁵⁾
(1) ^dIF^/dt
(1) dI_F/dt - rate of change of current
through zero crossing
(2) I_RRM - peak reverse recovery current
(3) t_rr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 I_RRM and 0.50 I_RRM
extrapolated to zero current.
0.75 I RRM
(4) Q_rr - area under curve defined by t_rr
and I_RRM
Qrr =
t rrx lRRM
2
(5) dI(rec)M^{/dt - peak rate of change of}
current during t_b portion of trr
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